IXFK30N100Q2_08 datasheet(1/4 Pages) IXYS

Part #	IXFK30N100Q2

Description	HiPerFET Power MOSFETs Q2-Class

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C30

A

I

DM

T

C = 25°C, pulse width limited by TJM

120

A

I

A

T

C = 25°C30

A

E

AS

T

C = 25°C4

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

735

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque

(IXFK)

1.13/10

Nm/lb.in.

F

C

Mounting force

(IXFX)

20..120 /4.5..27

N/lb.

Weight

TO-264

10

g

PLUS247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

1000

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 200

nA

I

DSS

V

DS = VDSS

50

μA

V

GS = 0V

T

J = 125°C

2

mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

400

m

Ω

V

DSS

= 1000V

I

D25

= 30A

R

DS(on) ≤

≤≤≤≤ 400m

Ω

t

rr

≤≤≤≤≤ 300ns

DS99160A(5/08)

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q

g

Low intrinsic R

g, low trr

Features

• Double metal process for low gate

resistance

• International standard packages

• Epoxy meet UL 94 V-0, flammability

classification

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density

HiPerFETTM

Power MOSFETs

Q2-Class

G = Gate

D = Drain

S = Source

TAB = Drain

PLUS247 (IXFX)

TO-264 (IXFK)

S

G

D

(TAB)

IXFK30N100Q2

IXFX30N100Q2

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