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IXFP130N10T Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFP130N10T Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS reserves the right to change limits, test conditions, and dimensions. IXFA130N10T IXFP130N10T Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS= 10V, ID = 60A, Note 1 55 93 S C iss 5080 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 630 pF C rss 95 pF t d(on) 30 ns t r 47 ns t d(off) 44 ns t f 28 ns Q g(on) 104 nC Q gs V GS= 10V, VDS = 0.5 • VDSS, ID = 25A 30 nC Q gd 29 nC R thJC 0.42 °C/W R thCH TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values T J = 25°C unless otherwise specified) Min. Typ. Max. I S V GS = 0V 130 A I SM Repetitive, pulse width limited by T JM 350 A V SD I F = 25A, VGS = 0V, Note 1 1.0 V t rr 67 ns I RM 4.7 A Q rr 160 nC Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-263 (IXFA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-220 (IXFP) Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 I F = 65A, -di/dt = 100A/μs V R = 0.5 • VDSS, VGS = 0V Resistive Switching Times V GS = 10V, VDS = 0.5 • VDSS, ID = 25A R G = 5Ω (External) |
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