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IXFA130N10T Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFA130N10T Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 5 page © 2008 IXYS CORPORATION, All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C 100 V V GSM Transient ± 30 V I D25 T C = 25°C 130 A I LRMS Lead Current Limit, RMS 75 A I DM T C = 25°C, pulse width limited by TJM 350 A I A T C = 25°C65 A E AS T C = 25°C 750 mJ P D T C = 25°C 360 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L 1.6mm (0.062 in.) from case for 10s 300 °C T SOLD Plastic body for 10 seconds 260 °C M d Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-220 3.0 g TO-263 2.5 g Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 100 V V GS(th) V DS = VGS, ID = 1mA 2.5 4.5 V I GSS V GS = ± 20V, VDS = 0V ± 200 nA I DSS V DS = VDSS 10 μA V GS = 0V T J = 150°C 500 μA R DS(on) V GS = 10V, ID = 25A, Notes 1, 2 9.1 m Ω TrenchMVTM Power MOSFET HiperFETTM Preliminary Technical Information N-Channel Enhancement Mode Avalanche Rated Fast intrisic diode IXFA130N10T IXFP130N10T V DSS = 100V I D25 = 130A R DS(on) ≤ ≤≤≤≤ 9.1m Ω Ω Ω Ω Ω DS100020(07/08) TO-263 (IXFA) TO-220 (IXFP) G S G D S G = Gate D = Drain S = Source TAB = Drain (TAB) (TAB) Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Fast intrinsic diode Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier |
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