1 - 2

© 2000 IXYS All rights reserved

Features

• International standard packages

• miniBLOC, with Aluminium nitride

isolation

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

200

V

V

GH(th)

V

DS

= V

2

4

V

I

GSS

V

±200

nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C

100

mA

V

T

mA

R

DS(on)

V

10 m

W

Pulse test, t

£ 300 ms,

duty cycle d

£ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

200

V

V

DGR

T

J

= 25

°C to 150°C; R

200

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

180

A

I

L(RMS)

Terminal current limit

100

A

I

DM

T

720

A

I

AR

T

A

E

AR

T

mJ

E

AS

T

J

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.5/13

Nm/lb.in.

Weight

30

g

98551B (7/00)

D

S

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

IXFN 180N20

V

DSS

= 200 V

I

D25

= 180 A

R

DS(on)

=

10 m

W

t

rr

< 250 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

Preliminary data

Power MOSFETs

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr