1

HMIC™ Silicon PIN Diode Switches

with Integrated Bias Network

Rev. V5

MASW-002102-13580

MASW-003102-13590

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Parameter

Absolute Maximum

Operating Temperature

Storage Temperature

Junction Temperature

Applied Reverse Voltage

50V

RF Incident Power

+33dBm C.W.

Bias Current +25°C

±20mA

Max. operating conditions for a combination

of RF power, D.C. bias and temperature:

+33dBm CW @ 15mA (per diode) @+85°C

MASW-002102-13580

MASW-003102-13590

Features

Description

The MASW-002102-13580 and MASW-003102-13590

devices are SP2T and SP3T broad band switches with

integrated bias networks utilizing M/A-COM Technology

Circuit) process, US Patent 5,268,310. This process

allows the incorporation of silicon pedestals that form

series and shunt diodes or vias by imbedding them in

low loss, low dispersion glass. By using small spacing

between elements, this combination of silicon and glass

gives HMIC devices low loss and high isolation per-

formance with exceptional repeatability through low

millimeter frequencies. Large bond pads facilitate the

use of low inductance ribbon bonds, while gold back-

side metallization allows for manual or automatic chip

bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders

or electrically conductive silver epoxy.

Yellow areas denote wire bond pads

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.