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BU931ZG-T3P-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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BU931ZG-T3P-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 2 page BU931Z NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 2 www.unisonic.com.tw QW-R214-015,D ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage BVCEO 500 V Emitter-Base Voltage BVEBO 5 V Collector Current (DC) IC 10 A Collector Peak Current ICM 15 A Base Current IB 1 A Base Peak Current IBM 5 A Total Dissipation (TC= 25 °C) PD 125 W Junction Temperature TJ +175 °C Storage Temperature TSTG -65 ~ +175 °C ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-off Current ICEO VCE = 500 V 100 μA Emitter Cut-off Current IEBO VEB = 5 V 20 mA VCL IC = 100mA 400 V VCE(SAT)1 IC = 7 A, IB = 70 mA 1.6 V Collector-Emitter Saturation Voltage VCE(SAT)2 IC = 8 A, IB = 100 mA 1.8 V VBE(SAT)1 IC = 7 A, IB = 70 mA 2.2 V Base-Emitter Saturation Voltage VBE(SAT)2 IC = 8 A, IB = 100 mA 2.4 V DC Current Gain hFE VCE = 10 V, IC = 5 A 300 Diode Forward Voltage VF IF = 8 A 2.5 V tS 15 μs Inductive Load Storage Time / Fall Time tF VCC = 12 V, Vclamp = 300 V L = 7 mH IC = 7 A, IB = 70 mA VBE = 0, RBE = 47Ω 0.5 μs UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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