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BT151G-6-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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BT151G-6-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page BT151 SCR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R301-017,C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT BT151-5 500 (Note 1) BT151-6 650 (Note 1) Repetitive Peak Off-State Voltages BT151-8 VDRM, VRRM 800 V Average On-State Current (half sine wave; Tmb ≤109°C) IT(AV) 7.5 A RMS on-State Current (all conduction angles) IT(RMS) 12 A t = 10 ms 100 Non-Repetitive Peak On-State Current (half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms ITSM 110 A I 2t for Fusing (t = 10 ms) I 2t 50 A 2s Repetitive Rate of Rise of On-State Current After Triggering (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs) dIT /dt 50 A/μs Peak Gate Current IGM 2 A Peak Gate Voltage VGM 5 V Peak Reverse Gate Voltage VRGM 5 V Peak Gate Power PGM 5 W Average Gate Power (Over any 20 ms period) PG(AV) 0.5 W Storage Temperature Tstg -40 ~150 °C Operating Junction Temperature TJ 125 °C Note: 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/ μs. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Mounting Base θJMb 1.3 K/W Junction to Ambient θJA 60 K/W STATIC CHARACTERISTICS (TJ=25℃,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate Trigger Current IGT VD = 12 V, IT = 0.1 A 2 15 mA Latching Current IL VD = 12 V, IGT = 0.1 A 10 40 mA Holding Current IH VD = 12 V, IGT = 0.1 A 7 20 mA On-State Voltage VT IT = 23 A 1.4 1.75 V Gate Trigger Voltage VGT VD = 12 V, IT = 0.1 A VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C 0.25 0.6 0.4 1.5 V Off-State Leakage Current ID , IR VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C 0.1 0.5 mA DYNAMIC CHARACTERISTICS(TJ=25℃,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate open circuit 50 130 Critical Rate of Rise of Off-State Voltage dVD /dt VDM = 67% VDRM(max), TJ = 125 °C, exponential waveform; RGK = 100Ω 200 1000 V/μs Gate Controlled Turn-on Time tGT ITM = 40 A, VD = VDRM(max), IG = 0.1 A, dIG /dt = 5 A/μs 2 μs Circuit Commutated Turn-off tIme tQ VD = 67% VDRM(max), TJ = 125°C; ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs, dVD /dt = 50 V/μs, RGK = 100 Ω 70 μs |
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