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18N60G-T47-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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18N60G-T47-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 18N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-221.D ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 18 A Pulsed Drain Current IDM 45 A Avalanche Current IAR 18 A Single Pulsed EAS 1000 Avalanche Energy Repetitive EAR 30 mJ Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 360 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 0.35 °С/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 V Drain-Source Leakage Current IDSS VDS=VDSS, VGS=0V 25 µA Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A (Note) 400 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 2500 pF Output Capacitance COSS 280 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1MHz 23 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 21 ns Turn-ON Rise Time tR 22 ns Turn-OFF Delay Time tD(OFF) 62 ns Turn-OFF Fall-Time tF VGS=10V, VDS=0.5VDSS, ID=18A, RG=5Ω (External) 22 ns Total Gate Charge QG 50 nC Gate Source Charge QGS 15 nC Gate Drain Charge QGD VGS=10V, VDS=0.5VDSS, ID=9A 18 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V (Note ) 1.5 V Maximum Continuous Drain-Source Diode Forward Current IS VGS=0V 18 A Maximum Pulsed Drain-Source Diode Forward Current ISM Repetitive 54 A Reverse Recovery Time tRR 200 ns Reverse Recovery Charge QRR VGS=0V, dIF/dt=100A/µs, IS=18A, VR=100V 0.8 µC Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. |
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