9N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-217.E

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

900

V

Gate-Source Voltage

±30

V

9.0

A

Pulsed Drain Current (Note 2)

36

A

Avalanche Current (Note 2)

9.0

A

Single Pulsed(Note 3)

900

mJ

Avalanche Energy

Repetitive(Note 2)

28

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

TO-247

160

W

TO-3P

240

Power Dissipation

TO-220F1

36

W

TO-247

1.28

W/°C

TO-3P

2.22

Linear Derating Factor

TO-220F1

0.288

W/°C

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-247

50

°C/W

TO-3P

40

Junction to Ambient

TO-220F1

62.5

°C/W

TO-247

0.78

°C/W

TO-3P

0.52

Junction-to-Case

TO-220F1

3.47

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

900

V

Drain-Source Leakage Current

10

μA

Forward

100

nA

Gate-Body Leakage Current

Reverse

-100

nA

Breakdown Voltage Temperature

Coefficient

BV

△

0.99

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Static Drain-Source On-Resistance

1.12

1.4

Ω

DYNAMIC PARAMETERS

Input Capacitance

2100 2730

pF

Output Capacitance

175

230

pF

Reverse Transfer Capacitance

f = 1.0 MHz

14

18

pF