7P20

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-288.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-200

V

Gate-Source Voltage

±30

V

Continuous Drain Current

-5.7

A

Pulsed Drain Current (Note 2)

-22.8

A

Avalanche Current (Note 2)

-5.7

A

Single Pulsed Avalanche Energy (Note 3)

570

mJ

Repetitive Avalanche Energy (Note 2)

5.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

-5.5

V/ns

2.5

Power Dissipation

55

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

°C /W

Junction to Case

2.27

°C /W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-200

V

Breakdown Voltage Temperature

Coefficient

Referenced to25°C

-0.1

V/°C

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-2.0

-4.0

V

Static Drain-Source On-Resistance

0.54

0.69

Ω

Forward Transconductance

3.7

S

DYNAMIC PARAMETERS

Input Capacitance

590

770

pF

Output Capacitance

140

180

pF

Reverse Transfer Capacitance

25

35

pF

SWITCHING PARAMETERS

Total Gate Charge

19

25

nC

Gate Source Charge

4.6

nC

Gate Drain Charge

9.5

nC

Turn-ON Delay Time

15

40

ns

Turn-ON Rise Time

110

230

ns

Turn-OFF Delay Time

30

70

ns

Turn-OFF Fall-Time

42

90

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

-5.0

V

Maximum Body-Diode Continuous Current

-5.7

A

Maximum Pulsed Drain-Source Diode

Forward Current

-22.8

A

Body Diode Reverse Recovery Time

180

ns

Body Diode Reverse Recovery Charge

1.07

µC

Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2%