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4N80G-TF1-T Datasheet(PDF) 1 Page - Unisonic Technologies |
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4N80G-TF1-T Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 6 page UNISONIC TECHNOLOGIES CO., LTD 4N80 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-505.a 4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode Power FET. It uses UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N80 is universally applied in high efficiency switch mode power supply. FEATURES * 4.0A, 800V, RDS(on)=3.6Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL 1.Gate 3.Source 2.Drain 1 1 TO-220 TO-220F 1 TO-220F1 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 4N80L-TA3-T 4N80G-TA3-T TO-220 G D S Tube 4N80L-TF3- T 4N80G-TF3- T TO-220F G D S Tube 4N80L-TF1- T 4N80G-TF1- T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
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