4N60G-X-TQ3-T datasheet(3/8 Pages) UTC

Part #	4N60G-X-TQ3-T

Description	4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 8 page

4N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-061,N

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

13

35

ns

Turn-On Rise Time

tR

45

100

ns

Turn-Off Delay Time

tD(OFF)

25

60

ns

Turn-Off Fall Time

tF

VDD = 300V, ID = 4.0A, RG = 25Ω

(Note 1, 2)

35

80

ns

Total Gate Charge

QG

15

20

nC

Gate-Source Charge

QGS

3.4

nC

Gate-Drain Charge

QGD

VDS= 480V,ID= 4.0A, VGS= 10 V

(Note 1, 2)

7.1

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 4.4 A

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

4.4

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

17.6

A

Reverse Recovery Time

tRR

250

ns

Reverse Recovery Charge

QRR

VGS = 0 V, IS = 4.4 A,

dIF/dt = 100 A/μs (Note 1)

1.5

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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