2SD1803-X-TN3-R datasheet(2/5 Pages) UTC

Part #	2SD1803-X-TN3-R

Description	HIGH CURRENT SWITCHING APPLICATION

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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2SD1803

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-014,E

ABSOLUATE MAXIUM RATINGS (T

A = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

DC

IC

5

Collector Current

PULSE

ICM

8

A

TA=25°C

1

Power Dissipation

TC=25°C

PD

20

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A= 25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=10μA, IE=0

60

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA, RBE=∞

50

V

Emitter-Base Breakdown Voltage

BVEBO

IE=10μA, IC=0

6

V

Collector Cutoff Current

ICBO

VCB=40V, IE=0

1

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

1

μA

hFE1

VCE=2V, IC=0.5A

70

400

DC Current Gain

hFE2

VCE=2V, IC=4A

35

C-E Saturation Voltage

VCE(SAT)

IC=3A, IB=0.15A

220

400

mV

B-E Saturation Voltage

VBE(SAT)

IC=3A, IB=0.15A

0.95

1.3

V

Gain-Bandwidth Product

fT

VCE=5V, Ic=1A

180

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

40

pF

Turn-on Time

tON

See Test Circuit

50

ns

Storage Time

tS

See Test Circuit

500

ns

Fall Time

tF

See Test Circuit

20

ns

CLASSIFICATION OF hFE1

RANK

Q

R

S

T

RANGE

70 ~ 140

100 ~ 200

140 ~ 280

200 ~ 400

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