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2SD882SG-X-AB3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SD882SG-X-AB3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SD882S NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R208-007,E TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter Voltage (V) 0 4 8 121620 0 0.4 0.8 1.2 1.6 Case Temperature, TC (°C) Derating Curve of Safe Operating Areas 200 150 100 50 0 -50 0 50 100 150 S/b lim ited IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA Current Gain-Bandwidth Product Collector-Emitter Voltage Safe Operating Area IC(max), Pulse 10mS 1mS Collector Current, Ic (A) 103 102 101 100 10-2 10-1 100 101 101 100 10-1 10-2 100 101 102 IC(max), DC VCE=5V IB=8mA DC Current Gain Collector Current, IC (mA) Collector Current, IC (mA) Saturation Voltage 103 102 101 100 100 101 103 104 VCE=2V 104 103 102 100 101 102 104 10 1 100 103 VBE(SAT) VCE(SAT) |
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