Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

K8S2815ETE Datasheet(PDF) 4 Page - Samsung semiconductor

Part # K8S2815ETE
Description  128Mb E-die NOR FLASH
Download  55 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K8S2815ETE Datasheet(HTML) 4 Page - Samsung semiconductor

  K8S2815ETE Datasheet HTML 1Page - Samsung semiconductor K8S2815ETE Datasheet HTML 2Page - Samsung semiconductor K8S2815ETE Datasheet HTML 3Page - Samsung semiconductor K8S2815ETE Datasheet HTML 4Page - Samsung semiconductor K8S2815ETE Datasheet HTML 5Page - Samsung semiconductor K8S2815ETE Datasheet HTML 6Page - Samsung semiconductor K8S2815ETE Datasheet HTML 7Page - Samsung semiconductor K8S2815ETE Datasheet HTML 8Page - Samsung semiconductor K8S2815ETE Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 55 page
background image
- 4 -
K8S2815ET(B)E
datasheet NOR FLASH MEMORY
Rev. 1.0
128M Bit (8M x16) Muxed Burst , Multi Bank NOR Flash Memory
1.0 FEATURES
• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization
- 8,386,108 x 16 bit ( Word Mode Only)
• Multiplexed Data and Address for reduction of interconnections
- A/DQ0 ~ A/DQ15
• Read While Program/Erase Operation
• Multiple Bank Architecture
- 16 Banks (8Mb Partition)
• OTP Block : Extra 256-word block
• Read Access Time (@ CL=30pF)
- Asynchronous Random Access Time : 70ns
- Synchronous Random Access Time : 70ns
- Burst Access Time :
14.5ns (54MHz) / 11ns (66MHz) / 9ns (83Mhz) / 7ns (108Mhz)
• Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with Wrap
• Block Architecture
- Eight 4Kword blocks and two hundreds fifty-five 32Kword blocks
- Bank 0 contains eight 4 Kword blocks and fifteen 32Kword blocks
- Bank 1 ~ Bank 15 contain two hundred forty 32Kword blocks
• Reduce program time using the VPP
• Support Single & Quad word accelerate program
• Power Consumption (Typical value, CL=30pF)
- Burst Access Current : 24mA
- Program/Erase Current : 15mA
- Read While Program/Erase Current : 40mA
- Standby Mode/Auto Sleep Mode : 15uA
• Block Protection/Unprotection
- Using the software command sequence
- Last two boot blocks are protected by WP=VIL
- All blocks are protected by VPP=VIL
• Handshaking Feature
- Provides host system with minimum latency by monitoring
RDY
• Erase Suspend/Resume
• Program Suspend/Resume
• Unlock Bypass Program/Erase
• Hardware Reset (RESET)
• Data Polling and Toggle Bits
- Provides a software method of detecting the status of program
or erase completion
• Endurance
- 100K Program / Erase cycles
• Extended Temperature : -25°C ~ 85°C
• Support Common Flash Memory Interface
• Low Vcc Write Inhibit
• Package : Package : 44-ball FBGA Type, 7.7 x 6.2mm
0.5 mm ball pitch
1.0 mm (Max.) Thickness
2.0 GENERAL DESCRIPTION
The K8S2815E featuring single 1.8V power supply is a 128Mbit Synchro-
nous Burst Multi Bank Flash Memory organized as 8Mx16. The memory
architecture of the device is designed to divide its memory arrays into 263
blocks with independent hardware protection. This block architecture pro-
vides highly flexible erase and program capability. The K8S2815E NOR
Flash consists of sixteen banks. This device is capable of reading data from
one bank while programming or erasing in the other bank.
Regarding read access time, the K8S2815E provides an 14.5ns burst
access time and an 70ns initial access time at 54MHz. At 66MHz, the
K8S2815E provides an 11ns burst access time and 70ns initial access time.
At 83MHz, the K8S2815E provides an 9ns burst access time and 70ns ini-
tial access time. At 108MHz, the K8S2815E provides an 7ns burst access
time and 70ns initial access time. The device performs a program operation
in units of 16 bits (Word) and an erase operation in units of a block. Single
or multiple blocks can be erased. The block erase operation is completed
within typically 0.7sec. The device requires 15mA as program/erase current
in the extended temperature ranges.
The K8S2815E NOR Flash Memory is created by using Samsung's
advanced CMOS process technology.


Similar Part No. - K8S2815ETE

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K8S1215ETC SAMSUNG-K8S1215ETC Datasheet
1Mb / 83P
   512Mb C-die NOR FLASH
K8S5615ETC SAMSUNG-K8S5615ETC Datasheet
1Mb / 65P
   256Mb C-die NOR Flash
K8S6415EBB-DC7C SAMSUNG-K8S6415EBB-DC7C Datasheet
905Kb / 39P
   64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
K8S6415EBB-DE7C SAMSUNG-K8S6415EBB-DE7C Datasheet
905Kb / 39P
   64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
K8S6415EBB-FC7C SAMSUNG-K8S6415EBB-FC7C Datasheet
905Kb / 39P
   64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
More results

Similar Description - K8S2815ETE

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K8A2815ETE SAMSUNG-K8A2815ETE Datasheet
984Kb / 51P
   128Mb E-die NOR FLASH
K8P2815UQC SAMSUNG-K8P2815UQC Datasheet
1Mb / 62P
   128Mb C-die NOR FLASH
K8P2716UZC SAMSUNG-K8P2716UZC Datasheet
1Mb / 56P
   128Mb C-die Page NOR Flash
K4S280432E SAMSUNG-K4S280432E Datasheet
144Kb / 14P
   128Mb E-die SDRAM Specification
K8S1215ETC SAMSUNG-K8S1215ETC Datasheet
1Mb / 83P
   512Mb C-die NOR FLASH
K8A1215ETC SAMSUNG-K8A1215ETC Datasheet
1Mb / 84P
   512Mb C-die NOR FLASH
K8S5615ETC SAMSUNG-K8S5615ETC Datasheet
1Mb / 65P
   256Mb C-die NOR Flash
K8A56ETC SAMSUNG-K8A56ETC Datasheet
1Mb / 64P
   256Mb C-die NOR FLASH
K8P5516UZB SAMSUNG-K8P5516UZB Datasheet
1Mb / 59P
   256Mb B-die NOR FLASH
K8S6815ETD SAMSUNG-K8S6815ETD Datasheet
1Mb / 48P
   64Mb D-die SLC NOR FLASH
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com