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| K8P5616UZB |
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 SAMSUNG
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39 page 
- 39 - K8P5616UZB datasheet NOR FLASH MEMORY Rev. 1.0 17.0 DC CHARACTERISTICS NOTE : 1) The ICC current listed includes both the DC operating current and the frequency dependent component(at 5 MHz). 2) ICC active during Internal Routine(program or erase) is in progress.. 3) The high voltage (VHH) must be used in the range of Vcc = 2.7V ~ 3.6V 4.)Not 100% tested. 5) ICC active during Read while Write is in progress. 18.0 CAPACITANCE (TA = 25 °C, VCC = 3.0V, f = 1.0MHz) NOTE : Capacitance is periodically sampled and not 100% tested. Parameter Symbol Test Conditions Min Typ Max Unit Input Leakage Current ILI VIN=VSS to VCC, VCC=VCCmax − 1.0 - + 1.0 μA Output Leakage Current ILO VOUT=VSS to VCC,VCC=VCCmax − 1.0 - + 1.0 μA Vcc Active Read Current 1) TBD TBD TBD VIO Non-Active Output TBD TBD TBD Active Write Current 2) ICC2CE=VIL, OE=VIH, WE=VIL -25 50 mA Read While Program Current 5) ICC3 CE=VIL, OE=VIH (@5Mhz) -35 50 mA Read While Erase Current 5) ICC4 CE=VIL, OE=VIH (@10Mhz) -35 50 mA Program While Erase Suspend Current ICC5CE=VIL, OE=VIH -27 55 mA Page Read Current ICC6OE=VIH, 8-word Page Read 40MHz - 10 15 mA ACC Accelerated Program Current IACC CE=VIL, OE=VIH -15 30 mA Standby Current ISB1 CE, RESET, WP/ACC= Vcc ± 0.3 -20 40 μA Standby Current During Reset ISB2 RESET= Vss ± 0.3 -20 40 μA Automatic Sleep Mode ISB3 VIH=Vcc ± 0.3V, VIL=VSS ±0.2V -20 40 μA Input Low Level VIL Vcc=2.7~3.6V -0.5 - 0.8 V Input High Level VIH Vcc=2.7~3.6V VCCx0.7 -Vcc+0.3 V Voltage for Program Acceleration 4) VHH Vcc = 2.7~3.6V 8.5 - 9.5 V Voltage for Autoselect and Temporary Sector Unprotect VID Vcc = 2.7~3.6V 8.5 - 9.5 V Output Low Level VOL IOL =100uA,Vcc=VCCmin - - 0.1 V Output High Level VOH IOH = -100uA, Vcc=VCCmin Vcc - 0.2 - - V Low VCC Lock-out Voltage 5) VLKO 2.3 - 2.5 V Item Symbol Test Condition Min Max Unit Input Capacitance CIN VIN=0V - 10 pF Output Capacitance COUT VOUT=0V - 10 pF Control Pin Capacitance CIN2 VIN=0V - 10 pF |
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