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K7M161835B-PC65 Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K7M161835B-PC65
Description  512Kx36 & 1Mx18 Flow-Through NtRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7M161835B-PC65 Datasheet(HTML) 10 Page - Samsung semiconductor

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512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 10 -
K7M161835B
K7M163635B
Rev. 3.0 April 2006
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
LL
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don
t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
TOPR
0 to 70
°C
Industrial
TOPR
-40 to 85
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
CAPACITANCE*(TA=25°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
CIN
VIN=0V
-
5
pF
Output Capacitance
COUT
VOUT=0V
-
6
pF
OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C)
Notes: 1. The above parameters are also guaranteed at industrial temperature range.
2. It should be VDDQ
≤ VDD
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD1
2.375
2.5
2.625
V
VDDQ1
2.375
2.5
2.625
V
VDD2
3.135
3.3
3.465
V
VDDQ2
3.135
3.3
3.465
V
Ground
VSS
00
0
V
VDDQ
VIL
VDDQ+1.0V
20% tCYC(MIN)
VSS
VIH
VSS-1.0V
20% tCYC(MIN)
Undershoot Timing
Overshoot Timing
VDDQ+0.5V
VSS-0.5V


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