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K7M163635B Datasheet(PDF) 2 Page - Samsung semiconductor |
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K7M163635B Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 19 page 512Kx36 & 1Mx18 Flow-Through NtRAMTM - 2 - K7M161835B K7M163635B Rev. 3.0 April 2006 Document Title 512Kx36 & 1Mx18-Bit Flow Through NtRAMTM The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 1.0 2.0 3.0 Remark Advance Preliminary Preliminary Preliminary Preliminary Final Final Final History 1. Initial document. 1. Update the DC current spec(ICC, ISB) 1. Change the ISB,ISB1,ISB2 - ISB ; from 120mA to 170mA - ISB1 ; from 80mA to 150mA - ISB2 ; from 80mA to 130mA 1. Remove the 1.8V Vdd voltage level 1. Remove the -75 speed bin 1. Finalize the datasheet 1. Add the overshoot timing 1. Change ordering information Draft Date Mar. 23. 2004 May. 21. 2004 Sep. 21. 2004 Oct. 18. 2004 Jan. 04. 2004 July 18. 2005 Feb. 16. 2006 Apr. 04. 2006 |
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