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K7K3236T2C Datasheet(PDF) 6 Page - Samsung semiconductor

Part # K7K3236T2C
Description  1Mx36 & 2Mx18 DDRII CIO b2 SRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7K3236T2C Datasheet(HTML) 6 Page - Samsung semiconductor

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1Mx36 & 2Mx18 DDRII+ CIO b2 SRAM
K7K3236T2C
K7K3218T2C
- 6 -
Rev. 1.3 August 2008
The K7K3236T2C and K7K3218T2C are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are orga-
nized as 1,048,576 words by 36bits for K7K3236T2C and 2,097,152 words by 18 bits for K7K3218T2C .
Address, data inputs, and all control signals are synchronized to the input clock ( K or K ). Read data are referenced to echo clock (
CQ or CQ ) outputs. Read address and write address are registered on rising edges of the input K clocks. Common address bus is
used to access address both for read and write operations. The internal burst counter is fixed to 2-bit sequential for both read and
write operations. Synchronous pipeline read and late write enable high speed operations. Simple depth expansion is accomplished
by using LD for port selection. Byte write operation is supported with BW0 and BW1 ( BW2 and BW3) pins for x18 ( x36 ) device.
IEEE 1149.1 serial boundary scan (JTAG) simplifies monitoriing package pads attachment status with system.
The K7K3236T2C and K7K3218T2C are implemented with SAMSUNG's high performance 6T CMOS technology and is available in
165pin FBGA packages. Multiple power and ground pins minimize ground bounce.
GENERAL DESCRIPTION
Read Operations
Read cycles are initiated by initiating R/W as high at the rising edge of the positive input clock K. Address is presented and stored in
the read address register synchronized with K clock. For 2-bit burst DDR operation, it will access two 36-bit or 18-bit data words with
each read command.
The first pipelined data is transfered out of the device triggered by K clock rising edge. Next burst data is triggered by the rising edge
of following K clock rising edge. Continuous read operations are initated with K clock rising edge. And pipelined data are transferred
out of device on every rising edge of both K and K clocks. Initial read data latency is 2 clock cycles when DLL is on.
When the LD is disabled after a read operation, the K7K3236T2C and K7K3218T2C will first complete burst read operation before
entering into deselect mode at the next K clock rising edge. Then output drivers disabled automatically to high impedance state.
Write cycles are initiated by activating R/W as low at the rising edge of the positive input clock K. Address is presented and stored in
the write address register synchronized with next K clock. For 2-bit burst DDR operation, it will write two 36-bit or 18-bit data words
with each write command.
The first "late writed" data is transfered and registered in to the device synchronous with next K clock rising edge. Next burst data is
transfered and registered synchronous with following K clock rising edge. Continuous write operations are initated with K rising edge.
And "late writed" data is presented to the device on every rising edge of both K and K clocks. When the LD is disabled, the
K7K3236T2C and K7K3218T2C will enter into deselect mode.
The device disregards input data presented on the same cycle R/W disabled. The K7K3236T2C and K7K3218T2C support byte write
operations. With activating BW0 or BW1 ( BW2 or BW3 ) in write cycle, only one byte of input data is presented. In K7K3218T2C, BW0
controls write operation to D0:D8, BW1 controls write operation to D9:D17. And in K7K3236T2C, BW2 controls write operation to
D18:D26, BW3 controls write operation to D27:D35.
Write Operations


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