K7J321882C datasheet(10/18 Pages) SAMSUNG

Part #	K7J321882C

Description	1Mx36 & 2Mx18 DDR II SIO b2 SRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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1Mx36 & 2Mx18 DDR II SIO b2 SRAM

- 10 -

Rev. 1.1 August 2006

K7J323682C

K7J321882C

DC ELECTRICAL CHARACTERISTICS

Notes: 1. Minimum cycle. IOUT=0mA.

2. |IOH|=(VDDQ/2)/(RQ/5)

±15% for 175Ω ≤ RQ ≤ 350Ω.

3. |IOL|=(VDDQ/2)/(RQ/5)

±15% for 175Ω ≤ RQ ≤ 350Ω.

4. Minimum Impedance Mode when ZQ pin is connected to VDD.

5. Operating current is calculated with 50% read cycles and 50% write cycles.

6. Standby Current is only after all pending read and write burst operations are completed.

7. Programmable Impedance Mode.

8. These are DC test criteria. DC design criteria is VREF

±50mV. The AC VIH/VIL levels are defined separately for measuring

timing parameters.

9. VIL (Min.) DC=

-0.3V, VIL (Min)AC=-1.5V(pulse width ≤ 3ns).

10. VIH (Max)DC=

VDDQ+0.3, VIH (Max)AC=VDDQ+0.85V(pulse width ≤ 3ns).

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT NOTES

Input Leakage Current

IIL

VDD=Max; VIN=VSS to VDDQ

-2

+2

µA

Output Leakage Current

IOL

Output Disabled,

-2

+2

µA

Operating Current (x36)

ICC

VDD=Max, IOUT=0mA

Cycle Time

≥ tKHKH Min.

-33

750

mA

1,5

-30

-

700

-25

-

650

Operating Current (x18)

ICC

VDD=Max, IOUT=0mA

Cycle Time

≥ tKHKH Min.

-33

700

mA

1,5

-30

-

650

-25

-

600

Standby Current (NOP)

ISB1

Device deselected, IOUT=0mA, f=Max,

All Inputs

≤0.2V or ≥ VDD-0.2V

-33

300

mA

1,6

-30

-

280

-25

-

250

Output High Voltage

VOH1

VDDQ/2-0.12 VDDQ/2+0.12

V

2,7

Output Low Voltage

VOL1

VDDQ/2-0.12 VDDQ/2+0.12

V

3,7

Output High Voltage

VOH2

IOH=-1.0mA

VDDQ-0.2

VDDQ

V4

Output Low Voltage

VOL2

IOL=1.0mA

VSS

0.2

V

4

Input Low Voltage

VIL

-0.3

VREF-0.1

V

8,9

Input High Voltage

VIH

VREF+0.1

VDDQ+0.3

V

8,10

ABSOLUTE MAXIMUM RATINGS*

*Note: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2. VDDQ must not exceed VDD during normal operation.

PARAMETER

SYMBOL

RATING

UNIT

Voltage on VDD Supply Relative to VSS

VDD

-0.5 to 2.9

V

Voltage on VDDQ Supply Relative to VSS

VDDQ

-0.5 to VDD

V

Voltage on Input Pin Relative to VSS

VIN

-0.5 to VDD+0.3

V

Storage Temperature

TSTG

-65 to 150

°C

Operating Temperature

Commercial / Industrial

TOPR

0 to 70 / -40 to 85

°C

Storage Temperature Range Under Bias

TBIAS

-10 to 85

°C

OPERATING CONDITIONS

PARAMETER

SYMBOL

Min.

MAX

UNIT

Supply Voltage

VDD

1.7

1.9

V

VDDQ

1.4

1.9

V

Reference Voltage

VREF

0.68

0.95

V

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