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K7D163674B Datasheet(PDF) 6 Page - Samsung semiconductor

Part # K7D163674B
Description  512Kx36 & 1Mx18 SRAM
Download  16 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7D163674B Datasheet(HTML) 6 Page - Samsung semiconductor

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Rev 1.1
512Kx36 & 1Mx18 SRAM
- 6 -
Jan. 2005
K7D161874B
K7D163674B
TRUTH TABLE
NOTE : - B(Both) is DIN in write cycle and DOUT in read cycle. Byte write function is not supported. X means "Don't Care".
- K & K are complementary.
K
G
B1
B2
B3
DQ
Operation
L
XXXX
Hi-Z
Clock Stop
X
H
L
X
Hi-Z
No Operation, Pipeline High-Z
L
L
H
H
DOUT
Load Address, Single Read
L
L
H
L
DOUT
Load Address, Double Read
X
L
L
H
DIN
Load Address, Single Write
X
L
L
L
DIN
Load Address, Double Write
X
H
H
X
B
Increment Address, Continue
4 Burst Operation for Interleaved Burst (LBO = VDDQ)
NOTE : - For Interleave Burst LBO = VDDQ is recommended. If LBO = VDD, it must not exceed 2.63V.
Interleaved Burst
Case 1
Case 2
Case 3
Case 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
0
1
1
1
0
1
0
1
1
0
0
0
1
0
1
1
1
0
0
1
0
1
0
BURST SEQUENCE TABLE
4 Burst Operation for Linear Burst (LBO = VSS)
Linear Burst Mode
Case 1
Case 2
Case 3
Case 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
1
1
0
1
0
1
0
1
1
0
0
0
1
0
1
1
0
0
1
1
0
1
0


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