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CY7C1321KV18-333BZC Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY7C1321KV18-333BZC
Description  18-Mbit DDR II SRAM Four-Word Burst Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1321KV18-333BZC Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY7C1317KV18, CY7C1917KV18
CY7C1319KV18, CY7C1321KV18
Document Number: 001-58906 Rev. *C
Page 10 of 33
register until the next write cycle occurs. On the first write cycle
after the read(s), the stored data from the earlier write is written
into the SRAM array. This is called a posted write.
If a read is performed on the same address on which a write is
performed in the previous cycle, the SRAM reads out the most
current data. The SRAM does this by bypassing the memory
array and reading the data from the registers.
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to enable the SRAM to adjust its output
driver impedance. The value of RQ must be 5 × the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175
 and 350 , with V
DDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles at power up to
account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the DDR II to simplify data capture
on high speed systems. Two echo clocks are generated by the
DDR II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free running clocks and are
synchronized to the output clock of the DDR II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in
Switching Characteristics on page 26.
PLL
These chips use a PLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the PLL is locked after
20
s of stable clock. The PLL can also be reset by slowing or
stopping the input clocks K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock it to the
desired frequency. The PLL automatically locks 20
s after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in DDR I mode (with one cycle latency and a longer
access time).
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