CY7C1150KV18-400BZXI datasheet(11/29 Pages) CYPRESS

Part #	CY7C1150KV18-400BZXI

Description	18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

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Manufacturer	CYPRESS [Cypress Semiconductor]

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11 / 29 page

CY7C1146KV18, CY7C1157KV18

CY7C1148KV18, CY7C1150KV18

Document Number: 001-58912 Rev. *C

Page 11 of 29

Truth Table

The truth table for the CY7C1146KV18, CY7C1157KV18, CY7C1148KV18, and CY7C1150KV18 follow.[3, 4, 5, 6, 7, 8]

Operation

K

LD

R/W

DQ

Write cycle:

Load address; wait one cycle;

input write data on consecutive K and K rising edges.

L-H

L

D(A) at K(t + 1)



D(A+1) at K(t + 1)



Read cycle: (2.0 cycle latency)

Load address; wait two cycles;

read data on consecutive K and K rising edges.

L-H

L

H

Q(A) at K(t + 2)



Q(A+1) at K(t + 2)



NOP: No operation

L-H

H

X

High Z

Standby: Clock stopped

Stopped

X

Previous State

Write Cycle Descriptions

The write cycle description table for CY7C1146KV18 and CY7C1148KV18 follows.[3, 9]

BWS0/

NWS0

BWS1/

NWS1

K

Comments

L

L–H

–

During the data portion of a write sequence



CY7C1146KV18

both nibbles (D[7:0]) are written into the device.

CY7C1148KV18

both bytes (D[17:0]) are written into the device.

L

–

L-H During the data portion of a write sequence



CY7C1146KV18

both nibbles (D[7:0]) are written into the device.

CY7C1148KV18

both bytes (D[17:0]) are written into the device.

L

H

L–H

–

During the data portion of a write sequence



CY7C1146KV18

only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.

CY7C1148KV18

only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.

L

H

–

L–H During the data portion of a write sequence



CY7C1146KV18

only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.

CY7C1148KV18

only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.

H

L

L–H

–

During the data portion of a write sequence



CY7C1146KV18

only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.

CY7C1148KV18

only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.

H

L

–

L–H During the data portion of a write sequence



CY7C1146KV18

only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.

CY7C1148KV18

only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.

H

L–H

–

No data is written into the devices during this portion of a write operation.

H

–

L–H No data is written into the devices during this portion of a write operation.

Notes

3. X = ‘Don’t Care’, H = Logic HIGH, L = Logic LOW,



represents rising edge.

4. Device powers up deselected with the outputs in a tristate condition.

5. ‘A’ represents address location latched by the devices when transaction was initiated. A + 1 represents the address sequence in the burst.

6. ‘t’ represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.

7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well.

8. Ensure that when clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

9. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on

different portions of a write cycle, as long as the setup and hold requirements are achieved.

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