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CY2XL11 Datasheet(PDF) 2 Page - Cypress Semiconductor

Part # CY2XL11
Description  100 MHz LVDS Clock Generator Output frequency: 100 MHz
Download  9 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY2XL11 Datasheet(HTML) 2 Page - Cypress Semiconductor

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CY2XL11
Document Number: 001-42886 Rev. *F
Page 2 of 9
Frequency Table
Input Crystal Frequency (MHz)
PLL Multiplier Value
Output Frequency (MHz)
25
4
100
Absolute Maximum Conditions
Parameter
Description
Condition
Min
Max
Unit
VDD
Supply voltage
–0.5
4.4
V
VIN
[1]
Input voltage, DC
Relative to VSS
–0.5
VDD + 0.5
V
TS
Temperature, storage
Non operating
–65
150
°C
TJ
Temperature, junction
135
°C
ESDHBM
ESD protection (human body model)
JEDEC STD 22-A114-B
2000
V
UL–94
Flammability rating
At 1/8 inch
V–0
Θ
JA
[2]
Thermal resistance, junction to ambient 0 m/s airflow
100
°C/W
1 m/s airflow
91
2.5 m/s airflow
87
Notes
1. The voltage on any input or IO pin cannot exceed the power pin during power up.
2. Simulated using Apache Sentinel TI software. The board is derived from the JEDEC multilayer standard. It measures 76 x 114 x 1.6 mm and has 4-layers of
copper (2/1/1/2 oz.). The internal layers are 100% copper planes, while the top and bottom layers have 50% metalization. No vias are included in the model.
3. Outputs are terminated with 100
Ω between CLK and CLK#. Refer to Figure 8 on page 5.
4. IDD includes ~4 mA of current that is dissipated externally in the output termination resistor.
5. Not 100% tested, guaranteed by design and characterization.
6. Refer to Figure 2 on page 4.
7. Refer to Figure 3 on page 4.
Operating Conditions
Parameter
Description
Min
Max
Unit
VDD
3.3 V supply voltage
3.135
3.465
V
2.5 V supply voltage
2.375
2.625
V
TA
Ambient temperature
–5
70
°C
TPU
Power up time for all VDD to reach minimum specified voltage (ensure power
ramps is monotonic)
0.05
500
ms
DC Electrical Characteristics
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
IDD
[4]
Power supply current with output
terminated
VDD = 3.465 V, OE = VDD, output terminated
120
mA
VDD = 2.625 V, OE = VDD, output terminated
115
mA
VOD
[6]
LVDS differential output voltage
VDD = 3.3 V or 2.5 V, RTERM = 100 Ω between
CLK and CLK#
247
454
mV
ΔV
OD
[6]
Change in VOD between comple-
mentary output states
VDD = 3.3 V or 2.5 V, RTERM = 100 Ω between
CLK and CLK#
––
50
mV
VOS
[7]
LVDS offset output voltage
VDD = 3.3 V or 2.5 V, RTERM = 100 Ω between
CLK and CLK#
1.125
1.375
V
ΔV
OS
Change in VOS between comple-
mentary output states
VDD = 3.3 V or 2.5 V, RTERM = 100 Ω between
CLK and CLK#
––
50
mV
IOZ
Output leakage current
Three-state output, unterminated, measured
on one pin while floating the other pin,
OE = VSS
–35
35
μA
[+] Feedback


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