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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 04 — 6 July 2004

2 of 14

Philips Semiconductors

BFT25A

NPN 5 GHz wideband transistor

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

5.

Limiting values

[1]

Table 2:

Discrete pinning

Pin

Description

Simplified outline

Symbol

Code: V10

1

base

2

emitter

3

collector

SOT23

12

3

sym021

3

2

1

Table 3:

Ordering information

Type number

Package

Name

Description

Version

BFT25A

-

plastic surface mounted package; 3 leads

SOT23

Table 4:

Marking

Type number

Marking code [1]

BFT25A

34*

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

8

V

collector-emitter voltage

open base

-

5

V

emitter-base voltage

open collector

-

2

V

DC collector current

-

6.5

mA

total power dissipation

[1] -32

mW

storage temperature

−65

+150

°C

junction temperature

-

175

°C