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BB187 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BB187 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 9397 750 13835 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 3 November 2004 2 of 7 Philips Semiconductors BB187 VHF variable capacitance diode 4. Marking 5. Limiting values 6. Characteristics Table 3: Marking Type number Marking code BB187 X Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 32 V VRM peak reverse voltage in series with a 10 k Ω resistor -35 V IF forward current - 20 mA Tstg storage temperature −55 +150 °C Tj junction temperature −55 +125 °C Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IR reverse current see Figure 2 -- VR = 30 V --10 nA VR = 30 V; Tj =85 °C - - 200 nA rs diode series resistance f = 470 MHz; VR = 5 V - - 0.75 Ω Cd diode capacitance f = 1 MHz; see Figure 1 and Figure 3 VR = 2 V 29.3 - 34.2 pF VR = 25 V 2.57 2.75 2.92 pF capacitance ratio f = 1 MHz 11 - - capacitance matching VR = 2 V to 25 V; in a sequence of 10 diodes (gliding) --2 % C d2V () C d25V () ------------------- C d ∆ C d ---------- |
Similar Part No. - BB187_4 |
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Similar Description - BB187_4 |
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