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BFL4007 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # BFL4007
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

BFL4007 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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BFL4007
No. A1689-2/5
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
215
mJ
Avalanche Current *5
IAV
8.5
A
Note :
*4 VDD=99V, L=5mH, IAV=8.5A (Fig.1)
*5 L≤5mH, single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=480V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
35
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=7A
4.3
8.5
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=7A, VGS=10V
0.52
0.68
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
1200
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
220
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
43
pF
Turn-ON Delay Time
td(on)
See Fig.2
27
ns
Rise Time
tr
See Fig.2
72
ns
Turn-OFF Delay Time
td(off)
See Fig.2
122
ns
Fall Time
tf
See Fig.2
48
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=14A
46
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=14A
8.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=14A
26.4
nC
Diode Forward Voltage
VSD
IS=14A, VGS=0V
1.1
1.5
V
Reverse Recovery Time
trr
See Fig.3
IS=14A, VGS=0V, di/dt=100A/μs
95
ns
Reverse Recovery Charge
Qrr
250
nC
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
50Ω
≥50Ω
RG
VDD
L
10V
0V
BFL4007
G
S
D
P.G
RGS=50Ω
G
S
D
ID=7A
RL=28.6Ω
VDD=200V
VOUT
BFL4007
VIN
PW=10μs
D.C.≤0.5%
10V
0V
VIN


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