3DD13001S-O-T-N-C datasheet(2/5 Pages) JSMC

Part #	3DD13001S-O-T-N-C

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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Manufacturer	JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]

Direct Link	http://www.hwdz.com.cn

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2 / 5 page

R

3DD13001S

版本：

200910D

2/5

绝对最大额定值

ABSOLUTE RATINGS

(Tc=25℃)

电特性 ELECTRICAL CHARACTERISTIC

热特性 THERMAL CHARACTERISTIC

项

目

Parameter

符

号

Symbol

最小值

Value(min)

最大值

Value(max)

单

位

Unit

结到环境的热阻

TO-92

Thermal Resistance Junction Case TO-92

Rth(j-a)

-

125

/W

℃

项

目

Parameter

符

号

Symbol

数

值

Value

单

位

Unit

集电极

—发射极直流电压

Collector- Emitter Voltage（VBE=0） VCES

600

V

集电极

—发射极直流电压

Collector- Emitter Voltage（IB=0）

VCEO

400

V

发射极

—基极直流电压

Emitter-Base Voltage

VEBO

9

V

最大集电极直流电流

Collector Current（DC）

IC

0.5

A

最大集电极脉冲电流

Collector Current（pulse）

ICP

1

A

最大集电极耗散功率

Total Dissipation (TO-92)

PC

1

W

最高结温

Junction Temperature

Tj

150

℃

贮存温度

Storage Temperature

Tstg

-55~+150

℃

项

目

Parameter

测试条件

Tests conditions

最小值

Value(min)

典型值

Value(typ)

最大值

Value(max)

单位

Unit

V(BR)CEO

Ic=10mA,IB=0

400

470

-

V

V(BR)CBO

Ic=1mA,IB=0

600

830

-

V

V(BR)EBO

IE=1mA,Ic=0

9

14

-

V

ICBO

VCB=580V, IE=0

-

5

μA

ICEO

VCE=390V,IB=0

-

10

μA

IEBO

VEB=9V, IC=0

-

5

μA

hFE

VCE=20V, IC=20mA

10

20

40

-

IC=0.05A, IB=5mA

-

0.4

0.5

V

VCE(sat)

IC=0.1A, IB=10mA

-

0.3

1.0

V

VBE(sat)

IC=0.05A, IB=5mA

-

0.8

1.2

V

tf

-

0.7

μS

ts

VCC=24V IC=0.1A,IB1=-IB2=0.02A

-

4

μS

fT

VCE=10V, Ic=0.02A

4

-

MHz

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