3DD4515-O-AN-N-B datasheet(2/6 Pages) JSMC

Part #	3DD4515-O-AN-N-B

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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Manufacturer	JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]

Direct Link	http://www.hwdz.com.cn

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2 / 6 page

R

3DD4515

版本：

200910C

2/6

绝对最大额定值

ABSOLUTE RATINGS (Tc=25℃)

注

：pulse电流宽度为小于5ms的非重复单脉冲。

Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

< 10%.

电特性

ElECTRICAL CHARACTERISTIC

热特性

THERMAL CHARACTERISTIC

项

目

Parameter

符

号

Symbol

最小值

Value(min)

最大值

Value(max)

单

位

Unit

结到管壳的热阻

TO-3PN(B)

Thermal Resistance Junction Case TO-3PN(B)

Rth(j-c)

-

1.05

/W

℃

项

目

Parameter

符

号

Symbol

数

值

Value

单

位

Unit

集电极

—发射极直流电压

Collector- Emitter Voltage（VBE=0） VCES

700

V

集电极

—发射极直流电压

Collector- Emitter Voltage（IB=0）

VCEO

400

V

发射极

—基极直流电压

Emitter-Base Voltage

VEBO

9

V

最大集电极直流电流

Collector Current（DC）

IC

15

A

最大集电极脉冲电流

Collector Current（pulse）

ICP

30

A

最大基极直流电流

Base Current（DC）

IB

7

A

最大基极脉冲电流

Base Current（pulse）

IBP

14

A

最大集电极耗散功率

Total Dissipation (TO-3PN(B))

PC

120

W

最高结温

Junction Temperature

Tj

150

℃

贮存温度

Storage Temperature

Tstg

-55~+150

℃

项

目

Parameter

测试条件

Tests conditions

最小值

Value(min)

典型值

Value(typ)

最大值

Value(max)

单位

Unit

V(BR)CEO

IC=10mA,IB=0

400

-

V

V(BR)CBO

IC=1mA,IB=0

700

-

V

V(BR)EBO

IE=1mA,IC=0

9

-

V

ICBO

VCB=700V, IE=0

-

100

μA

ICEO

VCE=400V,IB=0

-

50

μA

IEBO

VEB=9V, IC=0

-

10

μA

Hfe(1)

VCE =5V, IC=2A

15

-

50

Hfe(2)

VCE =5V, IC=6A

10

-

45

hFE(3)

VCE =5V, IC=10A

8

-

VCE(sat)

IC=10A, IB=2A

-

1.0

V

VBE(sat)

IC=10A, IB=2A

-

1.5

V

tf

-

0.7

μS

ts

VCC=24V IC=6A,IB1=-IB2=1.2A

-

3

μS

fT

VCE=10V, IC=0.5A

4

-

MHz

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3DD4515-O-AN-N-B Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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