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CQDD-25N Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CQDD-25N Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  CQDD-25M CQDD-25N SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQDD-25M CQDD-25N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=90°C) IT(RMS) 25 A Peak One Cycle Surge, t=8.3ms ITSM 150 A I2t Value for Fusing, t=8.3ms I2t 94 A2s Peak Gate Power, tp=10μs PGM 40 W Average Gate Power Dissipation PG (AV) 1.0 W Peak Gate Current, tp=10μs IGM 10 A Peak Gate Voltage, tp=10μs VGM 16 V Critical Rate of Rise of On-State Current Repetitive, f=60Hz di/dt 10 A/μs Operating Junction Temperature TJ -40 to +125 °C Storage Temperature Tstg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 1.7 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM Rated VDRM 10 μA IDRM Rated VDRM, TC=125°C 2.0 mA IGT VD=12V, RL=10Ω, QUAD I, II, III 11.1 30 mA IGT VD=12V, RL=10Ω, QUAD IV 28.2 60 mA IH IT=100mA 18.4 50 mA VGT VD=12V, RL=10Ω, QUAD I, II, III 1.03 1.50 V VGT VD=12V, RL=10Ω, QUAD IV 1.74 2.50 V VTM ITM=35A, tp=380μs 1.80 V dv/dt VD=2/3 VDRM, RGK=∞, TC=125°C 6.0 V/μs D2PAK CASE R2 (12-February 2010) www.centra lsemi.com |
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