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CY62256NLL-55ZXA Datasheet(PDF) 4 Page - Cypress Semiconductor

Part # CY62256NLL-55ZXA
Description  256K (32K 횞 8) Static RAM
Download  14 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62256NLL-55ZXA Datasheet(HTML) 4 Page - Cypress Semiconductor

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CY62256N
Document Number: 001-06511 Rev. *D
Page 4 of 14
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65
C to +150 C
Ambient temperature with
power applied ........................................... –55
C to +125 C
Supply voltage to ground potential
(pin 28 to pin 14)...........................................–0.5 V to +7.0 V
DC voltage applied to outputs
in high Z State[3] .................................. –0.5 V to VCC + 0.5 V
DC input voltage[3]............................... –0.5 V to VCC + 0.5 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch up current..................................................... > 200 mA
Operating Range
Range
Ambient Temperature (TA)[4]
VCC
Commercial
0
C to +70 C
5 V
 10%
Industrial
–40
C to +85 C
5 V
 10%
Automotive-A
–40
C to +85 C
5 V
 10%
Automotive-E
–40
C to +125 C
5 V
 10%
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
–55
–70
Unit
Min Typ[5]
Max
Min
Typ[5]
Max
VOH
Output HIGH voltage
VCC = Min, IOH = 1.0 mA
2.4
2.4
V
VOL
Output LOW voltage
VCC = Min, IOL = 2.1 mA
0.4
0.4
V
VIH
Input HIGH voltage
2.2
VCC +
0.5 V
2.2
VCC +
0.5 V
V
VIL
Input LOW voltage
–0.5
0.8
–0.5
0.8
V
IIX
Input leakage current
GND < VI < VCC
–0.5
+0.5
–0.5
+0.5
A
IOZ
Output leakage current GND < VO < VCC, output disabled
–0.5
+0.5
–0.5
+0.5
A
ICC
VCC operating supply
current
VCC = Max,
IOUT = 0 mA,
f = fMAX = 1/tRC
LL-Commercial
25
50
mA
LL - Industrial
25
50
25
50
mA
LL - Auto-A
25
50
25
50
mA
LL - Auto-E
25
50
mA
ISB1
Automatic CE
power down current—
TTL inputs
Max. VCC, CE > VIH,
VIN > VIH or VIN < VIL,
f = fMAX
LL-Commercial
0.3
0.5
mA
LL - Industrial
0.3
0.5
0.3
0.5
mA
LL - Auto-A
0.3
0.5
0.3
0.5
mA
LL - Auto-E
0.3
0.5
mA
ISB2
Automatic CE
power down current—
CMOS inputs
Max. VCC,
CE > VCC  0.3 V
VIN > VCC  0.3 V, or
VIN < 0.3 V, f = 0
LL-Commercial
0.1
5
A
LL - Industrial
0.1
10
0.1
10
A
LL - Auto-A
0.1
10
0.1
10
A
LL - Auto-E
0.1
15
A
Capacitance
Parameter[6]
Description
Test Conditions
Max
Unit
CIN
Input capacitance
TA = 25 C, f = 1 MHz, VCC = 5.0 V
6
pF
COUT
Output capacitance
8
pF
Notes
3. VIL (min) = 2.0 V for pulse durations of less than 20 ns.
4. TA is the “Instant-On” case temperature.
5. Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions
(TA = 25 °C, VCC). Parameters are guaranteed by design and characterization, and not 100% tested.
6. Tested initially and after any design or process changes that may affect these parameters.
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