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CY62167DV30LL Datasheet(PDF) 6 Page - Cypress Semiconductor |
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CY62167DV30LL Datasheet(HTML) 6 Page - Cypress Semiconductor |
6 / 17 page CY62167DV30 MoBL Document Number : 38-05328 Rev. *I Page 6 of 17 Data Retention Waveform[14] Switching Characteristics Over the Operating Range Parameter[15] Description 55 ns 70 ns Unit Min Max Min Max Read Cycle tRC Read cycle time 55 – 70 – ns tAA Address to data valid – 55 – 70 ns tOHA Data hold from address change 10 – 10 – ns tACE CE1 LOW and CE2 HIGH to data valid – 55 – 70 ns tDOE OE LOW to data valid – 25 – 35 ns tLZOE OE LOW to LOW Z[16] 5– 5 – ns tHZOE OE HIGH to High Z[16, 17] –20 – 25 ns tLZCE CE1 LOW and CE2 HIGH to Low Z [16] 10 – 10 – ns tHZCE CE1 HIGH and CE2 LOW to High Z [16, 17] –20 – 25 ns tPU CE1 LOW and CE2 HIGH to Power-up 0 – 0 – ns tPD CE1 HIGH and CE2 LOW to Power-down – 55 – 70 ns tDBE BLE/BHE LOW to data valid – 55 – 70 ns tLZBE BLE/BHE LOW to Low Z[16] 10 – 10 – ns tHZBE BLE/BHE HIGH to HIGH Z[16, 17] –20 – 25 ns Write Cycle[18] tWC Write cycle time 55 – 70 – ns tSCE CE1 LOW and CE2 HIGH to write end 40 – 60 – ns tAW Address set-up to write end 40 – 60 – ns tHA Address hold from write end 0 – 0 – ns tSA Address set-up to write start 0 – 0 – ns tPWE WE pulse width 40 – 45 – ns tBW BLE/BHE LOW to write end 40 – 60 – ns tSD Data set-up to write end 25 – 30 – ns tHD Data hold from write end 0 – 0 – ns tHZWE WE LOW to High-Z[16, 17] –20 – 25 ns tLZWE WE HIGH to Low-Z[16] 10 – 10 – ns Notes 14. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE. 15. Test conditions for all parameters other than Tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section. 16. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 17. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state. 18. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the Write. VCC, min. VCC, min. tCDR VDR > 1.5 V DATA RETENTION MODE tR CE1 or VCC BHE ,BLE or CE2 |
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