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CY62157DV30 Datasheet(PDF) 8 Page - Cypress Semiconductor |
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CY62157DV30 Datasheet(HTML) 8 Page - Cypress Semiconductor |
8 / 15 page CY62157DV30 MoBL® Document #: 38-05392 Rev. *J Page 8 of 15 Figure 3. Write Cycle 1 (WE Controlled)[22, 23, 24] Figure 4. Write Cycle 2 (CE1 or CE2 Controlled)[22, 23, 24] Notes 22. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write 23. Data I/O is high-impedance if OE = VIH. 24. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high-impedance state. 25. During this period, the I/Os are in output state and input signals should not be applied. Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tSCE tWC tHZOE VALID DATA CE1 ADDRESS CE2 WE DATA I/O OE BHE/BLE tBW See note 25 tHD tSD tPWE tHA tAW tSCE tWC tHZOE VALID DATA CE1 ADDRESS CE2 WE DATA I/O OE See note 25 BHE/BLE tBW tSA [+] Feedback |
Similar Part No. - CY62157DV30_10 |
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Similar Description - CY62157DV30_10 |
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