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CY62157DV30 Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY62157DV30
Description  8-Mbit (512K x 16) MoBL Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62157DV30 Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY62157DV30 MoBL®
Document #: 38-05392 Rev. *J
Page 8 of 15
Figure 3. Write Cycle 1 (WE Controlled)[22, 23, 24]
Figure 4. Write Cycle 2 (CE1 or CE2 Controlled)[22, 23, 24]
Notes
22. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate
a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal
that terminates the write
23. Data I/O is high-impedance if OE = VIH.
24. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high-impedance state.
25. During this period, the I/Os are in output state and input signals should not be applied.
Switching Waveforms (continued)
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
CE1
ADDRESS
CE2
WE
DATA I/O
OE
BHE/BLE
tBW
See note 25
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
CE1
ADDRESS
CE2
WE
DATA I/O
OE
See note 25
BHE/BLE
tBW
tSA
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