Document #: 001-13194 Rev. *C

Page 4 of 14

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage temperature ............................... –65 °C to + 150 °C

Ambient temperature with

power applied ......................................... –55 °C to + 125 °C

Supply voltage to ground

DC voltage applied to outputs

Output Current into Outputs (LOW) ............................ 20 mA

Static Discharge Voltage ........................................ > 2001 V

(MIL–STD–883, Method 3015)

Latch-up Current .................................................... > 200 mA

Operating Range

Device

Range

Ambient

Temperature

CY62138FLL

Industrial –40 °C to +85 °C 4.5 V to 5.5 V

Parameter

Description

Test Conditions

45 ns

Unit

Min

Typ [6]

Max

Output HIGH voltage

2.4

–

–

V

Output LOW voltage

–

–

0.4

V

Input HIGH voltage

2.2

–

V

Input LOW voltage

–0.5

–

0.8

V

Input leakage current

–1

–

+1

A

Outputcleakage Current

–1

–

+1

A

Current

CMOS levels

–13

18

mA

f = 1 MHz

–

1.6

2.5

Automatic CE Power-down

current CMOS inputs

–1

5

A

Capacitance

Parameter[8]

Description

Test Conditions

Max

Unit

Input capacitance

10

pF

Output capacitance

10

pF

Thermal Resistance

Parameter[8]

Description

Test Conditions

SOIC

TSOP II

Unit

Thermal resistance

(Junction to Ambient)

Still air, soldered on a 3 × 4.5 inch two-layer printed

circuit board

44.53

44.16

C / W

Thermal resistance

(Junction to Case)

24.05

11.97

C / W

Notes

5. Full device AC operation assumes a 100

8. Tested initially and after any design or process changes that may affect these parameters.

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