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CY62137FV18LL-55BVXI Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY62137FV18LL-55BVXI
Description  2-Mbit (128K x 16) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62137FV18LL-55BVXI Datasheet(HTML) 7 Page - Cypress Semiconductor

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CY62137FV18 MoBL®
Document #: 001-08030 Rev. *H
Page 7 of 16
Switching Characteristics
Over the Operating Range
Parameter[16, 17]
Description
55 ns
Unit
Min
Max
Read Cycle
tRC
Read cycle time
55
ns
tAA
Address to data valid
55
ns
tOHA
Data hold from address change
10
ns
tACE
CE LOW to data valid
–55
ns
tDOE
OE LOW to data valid
–25
ns
tLZOE
OE LOW to low Z [18]
5–
ns
tHZOE
OE HIGH to high Z [18, 19]
–18
ns
tLZCE
CE LOW to low Z [18]
10
ns
tHZCE
CE HIGH to high Z [18, 19]
–18
ns
tPU
CE LOW to power up
0–
ns
tPD
CE HIGH to power down
–55
ns
tDBE
BLE/BHE LOW to data valid
–55
ns
tLZBE
BLE/BHE LOW to Low Z [18]
10
ns
tHZBE
BLE/BHE HIGH to High Z [18, 19]
–18
ns
Write Cycle [20]
tWC
Write cycle time
45
ns
tSCE
CE LOW to write end
35
ns
tAW
Address setup to write end
35
ns
tHA
Address hold from write end
0
ns
tSA
Address setup to write start
0
ns
tPWE
WE pulse width
35
ns
tBW
BLE/BHE LOW to write end
35
ns
tSD
Data setup to write end
25
ns
tHD
Data hold from write end
0
ns
tHZWE
WE LOW to high Z [18, 19]
–18
ns
tLZWE
WE HIGH to low Z [18]
10
ns
Notes
16. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1V/ns or less, timing reference levels of VCC(typ)/2, input pulse levels
of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” on page 5.
17. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. Please see application note AN13842 for further clarification.
18. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given
device.
19. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state
20. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these
signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
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