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CY62126EV30LL Datasheet(PDF) 4 Page - Cypress Semiconductor |
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CY62126EV30LL Datasheet(HTML) 4 Page - Cypress Semiconductor |
4 / 16 page CY62126EV30 MoBL Document #: 38-05486 Rev. *H Page 4 of 16 Maximum Ratings Exceeding maximum ratings may shorten the battery life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ........................................... –55 °C to +125 °C Supply voltage to ground potential .............................. –0.3 V to 3.6 V (VCCmax + 0.3 V) DC voltage applied to outputs in High Z state[3, 4] .............. –0.3 V to 3.6 V (VCCmax + 0.3 V) DC input voltage[3, 4] 0.3 V to 3.6 V (V CCmax + 0.3 V) Output current into outputs (LOW) .............................. 20 mA Static discharge voltage.......................................... > 2001 V (MIL-STD-883, Method 3015) Latch up current..................................................... > 200 mA Notes 3. VIL(min) = –2.0 V for pulse durations less than 20 ns. 4. VIH(max) = VCC+0.75 V for pulse durations less than 20 ns. 5. Full device AC operation assumes a 100 s ramp time from 0 to V cc(min) and 200 s wait time after Vcc stabilization. 6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 7. Chip enable (CE) needs to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating. Operating Range Device Range Ambient Temperature VCC [5] CY62126EV30LL Industrial –40 °C to +85 °C 2.2 V to 3.6 V Automotive –40 °C to +125 °C Electrical Characteristics (Over the Operating Range) Parameter Description Test Conditions 45 ns (Industrial) 55 ns (Automotive) Unit Min Typ[6] Max Min Typ[6] Max VOH Output high voltage IOH = –0.1 mA 2.0 – – 2.0 – – V IOH = –1.0 mA, VCC > 2.70V 2.4 – – 2.4 – – V VOL Output low voltage IOL = 0.1 mA – – 0.4 – 0.4 V IOL = 2.1mA, VCC > 2.70V – – 0.4 – – 0.4 V VIH Input high voltage VCC = 2.2 V to 2.7 V 1.8 – VCC + 0.3 1.8 – VCC + 0.3 V VCC = 2.7 V to 3.6 V 2.2 – VCC + 0.3 2.2 – VCC + 0.3 V VIL Input low voltage VCC = 2.2 V to 2.7 V –0.3 – 0.6 –0.3 – 0.6 V VCC = 2.7 V to 3.6 V –0.3 – 0.8 –0.3 – 0.8 V IIX Input leakage current GND < VI < VCC –1 – +1 –4 – +4 A IOZ Output leakage current GND < VO < VCC, Output Disabled –1 – +1 –4 – +4 A ICC VCC operating supply current f = fmax = 1/tRC VCC = VCCmax IOUT = 0 mA CMOS levels 11 16 – 11 35 mA f = 1 MHz – 1.3 2.0 – 1.3 4.0 ISB1 Automatic CE power down current —CMOS inputs CE > VCC 0.2 V, VIN > VCC – 0.2 V, VIN < 0.2 V) f = fmax (Address and Data Only), f = 0 (OE, BHE, BLE and WE), VCC = 3.60V –1 4 – 1 35 A ISB2 [7] Automatic CE power down current —CMOS inputs CE > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = 3.60V –1 4 – 1 30 A |
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