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CY62126EV30LL Datasheet(PDF) 4 Page - Cypress Semiconductor

Part # CY62126EV30LL
Description  1-Mbit (64K x 16) Static RAM
Download  16 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62126EV30LL Datasheet(HTML) 4 Page - Cypress Semiconductor

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CY62126EV30 MoBL
Document #: 38-05486 Rev. *H
Page 4 of 16
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground
potential .............................. –0.3 V to 3.6 V (VCCmax + 0.3 V)
DC voltage applied to outputs
in High Z state[3, 4] .............. –0.3 V to 3.6 V (VCCmax + 0.3 V)
DC input voltage[3, 4]
 0.3 V to 3.6 V (V
CCmax + 0.3 V)
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current..................................................... > 200 mA
Notes
3. VIL(min) = –2.0 V for pulse durations less than 20 ns.
4. VIH(max) = VCC+0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100
s ramp time from 0 to V
cc(min) and 200 s wait time after Vcc stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
7. Chip enable (CE) needs to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
Operating Range
Device
Range
Ambient
Temperature
VCC
[5]
CY62126EV30LL
Industrial
–40 °C to +85 °C
2.2 V to
3.6 V
Automotive –40 °C to +125 °C
Electrical Characteristics
(Over the Operating Range)
Parameter
Description
Test Conditions
45 ns (Industrial)
55 ns (Automotive)
Unit
Min
Typ[6]
Max
Min
Typ[6]
Max
VOH
Output high voltage
IOH = –0.1 mA
2.0
2.0
V
IOH = –1.0 mA, VCC > 2.70V
2.4
2.4
V
VOL
Output low voltage
IOL = 0.1 mA
0.4
0.4
V
IOL = 2.1mA, VCC > 2.70V
0.4
0.4
V
VIH
Input high voltage
VCC = 2.2 V to 2.7 V
1.8
VCC + 0.3 1.8
VCC + 0.3
V
VCC = 2.7 V to 3.6 V
2.2
VCC + 0.3 2.2
VCC + 0.3
V
VIL
Input low voltage
VCC = 2.2 V to 2.7 V
–0.3
0.6
–0.3
0.6
V
VCC = 2.7 V to 3.6 V
–0.3
0.8
–0.3
0.8
V
IIX
Input leakage current
GND < VI < VCC
–1
+1
–4
+4
A
IOZ
Output leakage current GND < VO < VCC, Output Disabled
–1
+1
–4
+4
A
ICC
VCC operating supply
current
f = fmax = 1/tRC
VCC = VCCmax
IOUT = 0 mA
CMOS levels
11
16
11
35
mA
f = 1 MHz
1.3
2.0
1.3
4.0
ISB1
Automatic CE power
down current —CMOS
inputs
CE > VCC 0.2 V,
VIN > VCC – 0.2 V, VIN < 0.2 V)
f = fmax (Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
VCC = 3.60V
–1
4
1
35
A
ISB2
[7]
Automatic CE power
down current —CMOS
inputs
CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V,
f = 0, VCC = 3.60V
–1
4
1
30
A


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