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CY22381FXCT Datasheet(PDF) 5 Page - Cypress Semiconductor |
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CY22381FXCT Datasheet(HTML) 5 Page - Cypress Semiconductor |
5 / 11 page CY22381 CY223811 Document #: 38-07012 Rev. *H Page 5 of 11 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Supply Voltage................................................–0.5V to +7.0V DC Input Voltage ..............................–0.5V to + (VDD + 0.5V) Storage Temperature .................................. –65°C to +125°C Junction Temperature .................................................. 125°C Data Retention at Tj = 125°C ................................> 10 years Maximum Programming Cycles........................................100 Package Power Dissipation...................................... 250 mW Static Discharge Voltage (per MIL-STD-883, Method 3015) ........................... ≥ 2000V Latch up (per JEDEC 17) .................................... ≥ ±200 mA Operating Conditions Parameter Description Min Typ Max Unit VDD Supply Voltage 3.135 3.3 3.465 V TA Commercial Operating Temperature, Ambient 0 – +70 °C Industrial Operating Temperature, Ambient –40 – +85 °C CLOAD_OUT Max. Load Capacitance – – 15 pF fREF External Reference Crystal 8 – 30 MHz External Reference Clock[2], Commercial 1– 166 MHz External Reference Clock[2], Industrial 1– 150 MHz tPU Power up time for all VDD's to reach minimum specified voltage (power ramps must be monotonic) 0.05 – 500 ms Recommended Crystal Specifications Parameter Description Description Min Typ. Max Unit FNOM Nominal crystal frequency Parallel resonance, fundamental mode 8 – 30 MHz CLNOM Nominal load capacitance 8 – 20 pF R1 Equivalent series resistance (ESR) Fundamental mode – – 50 Ω DL Crystal drive level No external series resistor assumed – 0.5 2 mW Notes 1. Unless otherwise noted, Electrical and Switching Characteristics are guaranteed across these operating conditions. 2. External input reference clock must have a duty cycle between 40% and 60%, measured at VDD/2. 3. Guaranteed by design, not 100% tested. Electrical Characteristics Parameter Description Conditions[1] Min Typ Max Unit IOH Output High Current[3] VOH = VDD – 0.5, VDD = 3.3 V 12 24 – mA IOL Output Low Current[3] VOL = 0.5V, VDD = 3.3 V 12 24 – mA CXTAL_MIN Crystal Load Capacitance[3] Capload at minimum setting – 6 – pF CXTAL_MAX Crystal Load Capacitance[3] Capload at maximum setting – 30 – pF CIN Input Pin Capacitance[3] Except crystal pins – 7 – pF VIH HIGH-level Input Voltage CMOS levels,% of VDD 70% – – VDD VIL LOW-level Input Voltage CMOS levels,% of VDD –– 30% VDD IIH Input HIGH Current VIN = VDD – 0.3 V – <1 10 μA IIL Input LOW Current VIN = +0.3 V – <1 10 μA IOZ Output Leakage Current Three-state outputs – – 10 μA [+] Feedback |
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