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CY14B101PA Datasheet(PDF) 4 Page - Cypress Semiconductor |
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CY14B101PA Datasheet(HTML) 4 Page - Cypress Semiconductor |
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4 / 44 page  PRELIMINARY CY14C101PA CY14B101PA CY14E101PA Document #: 001-54392 Rev. *C Page 4 of 44 Device Operation CY14X101PA is a 1-Mbit serial (SPI) nvSRAM memory with integrated RTC and SPI interface. All the reads and writes to nvSRAM happen to the SRAM, which gives nvSRAM the unique capability to handle infinite writes to the memory. The data in SRAM is secured by a STORE sequence that transfers the data in parallel to the nonvolatile QuantumTrap cells. A small capacitor (VCAP) is used to AutoStore the SRAM data in nonvolatile cells when power goes down providing power-down data security. The QuantumTrap nonvolatile elements built in the reliable SONOS technology make nvSRAM the ideal choice for secure data storage. In CY14X101PA, the 1-Mbit memory array is organized as 128 K words × 8 bits. The memory can be accessed through a standard SPI interface that enables very high clock speeds up to 40 MHz with zero cycle delay read and write cycles. This nvSRAM chip also supports 104 MHz SPI access speed with a special instruction for read operation. CY14X101PA supports SPI modes 0 and 3 (CPOL, CPHA = 0, 0 and 1, 1) and operates as SPI slave. The device is enabled using the Chip Select (CS) pin and accessed through Serial Input (SI), Serial Output (SO), and Serial Clock (SCK) pins. CY14X101PA provides the feature for hardware and software write protection through the WP pin and WRDI instruction. CY14X101PA also provides mechanisms for block write protection (1/4, 1/2, or full array) using BP0 and BP1 pins in the Status Register. Further, the HOLD pin is used to suspend any serial communication without resetting the serial sequence. CY14X101PA uses the standard SPI opcodes for memory access. In addition to the general SPI instructions for read and write, CY14X101PA provides four special instructions that allow access to four nvSRAM specific functions: STORE, RECALL, AutoStore Disable (ASDISB), and AutoStore Enable (ASENB). The major benefit of nvSRAM over serial EEPROMs is that all reads and writes to nvSRAM are performed at the speed of SPI bus with zero cycle delay. Therefore, no wait time is required after any of the memory accesses. The STORE and RECALL operations need finite time to complete and all memory accesses are inhibited during this time. While a STORE or RECALL operation is in progress, the busy status of the device is indicated by the Hardware STORE Busy (HSB) pin and also reflected on the RDY bit of the Status Register. SRAM Write All writes to nvSRAM are carried out on the SRAM and do not use up any endurance cycles of the nonvolatile memory. This allows you to perform infinite write operations. A write cycle is performed through the WRITE instruction. The WRITE instruction is issued through the SI pin of the nvSRAM and consists of the WRITE opcode, three bytes of address, and one byte of data. Write to nvSRAM is done at SPI bus speed with zero cycle delay. CY14X101PA allows burst mode writes to be performed through SPI. This enables write operations on consecutive addresses without issuing a new WRITE instruction. When the last address in memory is reached in burst mode, the address rolls over to 0x00000 and the device continues to write. The SPI write cycle sequence is defined in the Memory Access section of SPI Protocol Description. SRAM Read A read cycle is performed at the SPI bus speed. The data is read out with zero cycle delay after the READ instruction is executed. READ instruction can be used upto 40 MHz clock speed. The READ instruction is issued through the SI pin of the nvSRAM and consists of the READ opcode and three bytes of address. The data is read out on the SO pin. Speed higher than 40 MHz (up to 104 MHz) requires FAST_READ instruction. The FAST_READ instruction is issued through the SI pin of the nvSRAM and consists of the FAST_READ opcode, three bytes of address, and one dummy byte. The data is read out on the SO pin. CY14X101PA enables burst mode reads to be performed through SPI. This enables reads on consecutive addresses without issuing a new READ instruction. When the last address in memory is reached in burst mode read, the address rolls over to 0x00000 and the device continues to read. The SPI read cycle sequence is defined in the Memory Access section of SPI Protocol Description STORE Operation STORE operation transfers the data from the SRAM to the nonvolatile QuantumTrap cells. The CY14X101PA STOREs data to the nonvolatile cells using one of the three STORE operations: AutoStore, activated on device power-down; Software STORE, activated by a STORE instruction; and Hardware STORE, activated by the HSB. During the STORE cycle, an erase of the previous nonvolatile data is first performed, followed by a program of the nonvolatile elements. After a STORE cycle is initiated, read/write to CY14X101PA is inhibited until the cycle is completed. The HSB signal or the RDY bit in the Status Register can be monitored by the system to detect if a STORE or Software RECALL cycle is in progress. The busy status of nvSRAM is indicated by HSB being pulled LOW or RDY bit being set to ‘1’. To avoid unnecessary nonvolatile STOREs, AutoStore and Hardware STORE operations are ignored unless at least one write operation has taken place since the most recent STORE or RECALL cycle. However, software initiated STORE cycles are performed regardless of whether a write operation has taken place. AutoStore Operation The AutoStore operation is a unique feature of nvSRAM which automatically stores the SRAM data to QuantumTrap cells during power-down. This STORE makes use of an external capacitor (VCAP) and enables the device to safely STORE the data in the nonvolatile memory when power goes down. During normal operation, the device draws current from VCC to charge the capacitor connected to the VCAP pin. When the voltage on the VCC pin drops below VSWITCH during power-down, the device inhibits all memory accesses to nvSRAM and automatically performs a conditional STORE operation using the charge from the VCAP capacitor. The AutoStore operation is not initiated if no write cycle has been performed since last RECALL. Note If a capacitor is not connected to VCAP pin, AutoStore must be disabled by issuing the AutoStore Disable instruction (AutoStore Enable (ASENB) Instruction on page 17). If AutoStore is enabled without a capacitor on the VCAP pin, the device attempts an AutoStore operation without sufficient charge [+] Feedback |
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