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CY14B104LA-BA25XI Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY14B104LA-BA25XI Datasheet(HTML) 9 Page - Cypress Semiconductor |
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9 / 24 page  CY14B104LA, CY14B104NA Document #: 001-49918 Rev. *H Page 9 of 24 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Maximum accumulated storage time At 150 °C ambient temperature..........................1000 h At 85 °C ambient temperature.................... .. 20 Years Ambient temperature with power applied ........................................... –55 °C to +150 °C Supply voltage on VCC relative to VSS............–0.5 V to 4.1 V Voltage applied to outputs in high-Z state...................................... –0.5 V to VCC + 0.5 V Input voltage .........................................–0.5 V to Vcc + 0.5 V Transient voltage (<20 ns) on any pin to ground potential .................. –2.0 V to VCC + 2.0 V Package power dissipation capability (TA = 25 °C) ................................................. .1.0 W Surface mount Pb soldering temperature (3 Seconds).......................................... +260 °C DC output current (1 output at a time, 1s duration) ..... 15 mA Static discharge voltage.......................................... > 2001 V (per MIL-STD-883, Method 3015) Latch up current..................................................... > 200 mA Operating Range Range Ambient Temperature VCC Industrial –40 °C to +85 °C 2.7 V to 3.6 V DC Electrical Characteristics Over the Operating Range (VCC = 2.7 V to 3.6 V) Parameter Description Test Conditions Min Typ[12] Max Unit VCC Power supply 2.7 3.0 3.6 V ICC1 Average VCC current tRC = 20 ns tRC = 25 ns tRC = 45 ns Values obtained without output loads (IOUT = 0 mA) –– 70 70 52 mA mA mA ICC2 Average VCC current during STORE All inputs don’t care, VCC = Max Average current for duration tSTORE –– 10 mA ICC3 Average VCC current at tRC= 200 ns, VCC (Typ), 25 °C All inputs cycling at CMOS levels. Values obtained without output loads (IOUT = 0 mA). –35 – mA ICC4 Average VCAP current during AutoStore cycle All inputs don’t care. Average current for duration tSTORE –– 5 mA ISB VCC standby current CE > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V). Standby current level after nonvolatile cycle is complete. Inputs are static. f = 0 MHz. –– 5 mA IIX[13] Input leakage current (except HSB) VCC = Max, VSS < VIN < VCC –1 – +1 μA Input leakage current (for HSB) VCC = Max, VSS < VIN < VCC –100 – +1 μA IOZ Off-state output leakage current VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or BHE/BLE > VIH or WE < VIL –1 – +1 μA VIH Input HIGH voltage 2.0 – VCC + 0.5 V VIL Input LOW voltage Vss – 0.5 – 0.8 V VOH Output HIGH voltage IOUT = –2 mA 2.4 – – V VOL Output LOW voltage IOUT = 4 mA – – 0.4 V VCAP Storage capacitor Between VCAP pin and VSS, 5 V rated 61 68 180 μF Notes 12. Typical values are at 25°C, VCC= VCC (Typ). Not 100% tested. 13. The HSB pin has IOUT = -2 uA for VOH of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This parameter is characterized but not tested. [+] Feedback [+] Feedback |
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