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CMPDM203NH Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPDM203NH Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  CMPDM203NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM203NH is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 203C MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V Continuous Drain Current (Steady State) ID 3.2 A Maximum Pulsed Drain Current, tp=10μs IDM 12.8 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=12V, VDS=0 10 μA IDSS VDS=20V, VGS=0 1.0 μA BVDSS VGS=0, ID=250μA 20 V VGS(th) VGS=VDS, ID=250μA 0.6 1.2 V rDS(ON) VGS=4.5V, ID=1.6A 0.033 0.05 Ω rDS(ON) VGS=2.5V, ID=1.6A 0.046 0.07 Ω gFS VDS=5.0V, ID=3.2A 10.5 S Crss VDS=10V, VGS=0, f=1.0MHz 44 pF Ciss VDS=10V, VGS=0, f=1.0MHz 395 pF Coss VDS=10V, VGS=0, f=1.0MHz 97 pF Qg(tot) VDD=10V, VGS=4.5V, ID=3.2A 6.8 10 nC Qgs VDD=10V, VGS=4.5V, ID=3.2A 0.8 1.2 nC Qgd VDD=10V, VGS=4.5V, ID=3.2A 0.9 1.1 nC ton VDD=10V, ID=3.2A, RG=10Ω 6.0 ns toff VDD=10V, ID=3.2A, RG=10Ω 22.8 ns FEATURES: • Low rDS(ON) (0.07Ω MAX @ VGS=2.5V) • High current (ID=3.2A) • Logic level compatibility APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment SOT-23F CASE R0 (20-October 2010) www.centra lsemi.com |
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