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CMLM0584 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMLM0584 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CMLM0584 Multi Discrete Module™ SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL UNITS Power Dissipation (Note 1) PD 350 mW Power Dissipation (Note 2) PD 300 mW Power Dissipation (Note 3) PD 150 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W MAXIMUM RATINGS - Q1: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 8.0 V Continuous Drain Current ID 450 mA MAXIMUM RATINGS - D1: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 40 V Continuous Forward Current IF 500 mA Peak Repetitive Forward Current, tp ≤1.0ms IFRM 3.5 A Peak Forward Surge Current, tp = 8.0ms IFSM 10 A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=8.0V, VDS=0 3.0 μA IDSS VDS=30V, VGS=0 1.0 μA BVDSS VGS=0, ID=100μA 30 V VGS(th) VDS=VGS, ID=250μA 0.5 1.0 V VSD VGS=0, IS=100mA 0.5 1.1 V rDS(ON) VGS=4.5V, ID=430mA 1.1 Ω rDS(ON) VGS=2.5V, ID=200mA 2.0 Ω rDS(ON) VGS=1.8V, ID=100mA 3.3 Ω gFS VDS =10V, ID=100mA 200 mS FEATURES: • ESD protection up to 2kV • Low rDS(on) Transistor (1.5Ω MAX @ VGS=2.5V) • Low VF Schottky Diode (0.47V MAX @ 0.5A) APPLICATIONS: • DC / DC Converters • Battery Powered Portable Equipment Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 MARKING CODE: 58C SOT-563 CASE R1 (28-July 2010) www.centr a lsemi.com • Device is Halogen Free by design |
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