Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

CY7C12651KV18-450BZXC Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY7C12651KV18-450BZXC
Description  36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
Download  30 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C12651KV18-450BZXC Datasheet(HTML) 7 Page - Cypress Semiconductor

Back Button CY7C12651KV18-450BZXC Datasheet HTML 3Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 4Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 5Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 6Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 7Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 8Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 9Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 10Page - Cypress Semiconductor CY7C12651KV18-450BZXC Datasheet HTML 11Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 30 page
background image
CY7C12611KV18, CY7C12761KV18
CY7C12631KV18, CY7C12651KV18
Document Number: 001-53193 Rev. *D
Page 7 of 30
Table 2. Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
Input-
synchronous
Data input signals. Sampled on the rising edge of K and K clocks when valid write operations are active.
CY7C12611KV18
 D[7:0]
CY7C12761KV18
 D[8:0]
CY7C12631KV18
 D[17:0]
CY7C12651KV18
 D[35:0]
WPS
Input-
synchronous
Write port select
 Active LOW. Sampled on the rising edge of the K clock. When asserted active, a
write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
NWS0,
NWS1,
Input-
synchronous
Nibble write select 0, 1
 Active LOW (CY7C12611KV18 Only). Sampled on the rising edge of the K
and K clocks when write operations are active. Used to select which nibble is written into the device
during the current portion of the write operations. NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the nibble write selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device.
BWS0,
BWS1,
BWS2,
BWS3
Input-
synchronous
Byte write select 0, 1, 2 and 3
 Active LOW. Sampled on the rising edge of the K and K clocks when
write operations are active. Used to select which byte is written into the device during the current portion
of the write operations. Bytes not written remain unaltered.
CY7C12761KV18
BWS0 controls D[8:0]
CY7C12631KV18
 BWS0 controls D[8:0] and BWS1 controls D[17:9]
CY7C12651KV18
 BWS0 controls D[8:0], BWS1 controls D[17:9],
BWS2 controls D[26:18], and BWS3 controls D[35:27]
All the byte write selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A
Input-
synchronous
Address inputs. Sampled on the rising edge of the K clock during active read and write operations. These
address inputs are multiplexed for both read and write operations. Internally, the device is organized as
4M x 8 (4 arrays each of 1M x 8) for CY7C12611KV18, 4 M x 9 (4 arrays each of 1 M x 9) for
CY7C12761KV18, 2 M x 18 (4 arrays each of 512K x 18) for CY7C12631KV18, and 1 M x 36 (4 arrays
each of 256K x 36) for CY7C12651KV18. Therefore, only 20 address inputs are needed to access the
entire memory array of CY7C12611KV18 and CY7C12761KV18, 19 address inputs for CY7C12631KV18
and 18 address inputs for CY7C12651KV18. These inputs are ignored when the appropriate port is
deselected.
Q[x:0]
Outputs-
synchronous
Data output signals. These pins drive out the requested data when the read operation is active. Valid
data is driven out on the rising edge of the K and K clocks during read operations. On deselecting the
read port, Q[x:0] are automatically tristated.
CY7C12611KV18
 Q[7:0]
CY7C12761KV18
 Q[8:0]
CY7C12631KV18
 Q[17:0]
CY7C12651KV18
 Q[35:0]
RPS
Input-
synchronous
Read port select
 Active LOW. Sampled on the rising edge of positive input clock (K). When active, a
read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is
allowed to complete and the output drivers are automatically tristated following the next rising edge of the
K clock. Each read access consists of a burst of four sequential transfers.
QVLD
Valid output
indicator
Valid output indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.
K
Input clock
Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device and
to drive out data through Q[x:0]. All accesses are initiated on the rising edge of K.
K
Input clock
Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0].
CQ
Echo clock
Synchronous echo clock outputs. This is a free running clock and is synchronized to the input clock
(K) of the QDR II+. The timings for the echo clocks are shown in the Switching Characteristics on page 24.
CQ
Echo clock
Synchronous echo clock outputs. This is a free running clock and is synchronized to the input clock
(K) of the QDR II+.The timings for the echo clocks are shown in the Switching Characteristics on page 24.
[+] Feedback


Similar Part No. - CY7C12651KV18-450BZXC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1265KV18 CYPRESS-CY7C1265KV18 Datasheet
943Kb / 28P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1265KV18-400BZC CYPRESS-CY7C1265KV18-400BZC Datasheet
943Kb / 28P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1265KV18-400BZXC CYPRESS-CY7C1265KV18-400BZXC Datasheet
943Kb / 28P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1265KV18-450BZXC CYPRESS-CY7C1265KV18-450BZXC Datasheet
943Kb / 28P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1265KV18-550BZC CYPRESS-CY7C1265KV18-550BZC Datasheet
943Kb / 28P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
More results

Similar Description - CY7C12651KV18-450BZXC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1261KV18 CYPRESS-CY7C1261KV18 Datasheet
943Kb / 28P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C12411KV18 CYPRESS-CY7C12411KV18 Datasheet
896Kb / 29P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1241KV18 CYPRESS-CY7C1241KV18 Datasheet
913Kb / 28P
   36-Mbit QDR짰 II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1241KV18 CYPRESS-CY7C1241KV18_12 Datasheet
855Kb / 30P
   36-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1263KV18 CYPRESS-CY7C1263KV18_12 Datasheet
887Kb / 30P
   36-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C2245KV18 CYPRESS-CY7C2245KV18 Datasheet
841Kb / 28P
   36-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) with ODT
CY7C1143KV18 CYPRESS-CY7C1143KV18 Datasheet
619Kb / 29P
   18-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1643KV18 CYPRESS-CY7C1643KV18 Datasheet
861Kb / 31P
   144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1543KV18 CYPRESS-CY7C1543KV18 Datasheet
869Kb / 29P
   72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
logo
Renesas Technology Corp
RMQSGA3636DGBA RENESAS-RMQSGA3636DGBA_15 Datasheet
853Kb / 30P
   36-Mbit QDR??II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com