CMKT2907A

CMKT2907AG

SURFACE MOUNT

DUAL PNP SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKT2907A and

CMKT2907AG each consist of two individual isolated

2907A PNP silicon transistors, manufactured by the

epitaxial planar process and epoxy molded in an

SOT-363 surface mount package. This ULTRAmini™

device has been designed for small signal general

purpose and switching applications.

• The CMKT2907AG is Halogen Free by design.

MARKING CODES:

CMKT2907A: K07

CMKT2907AG: K7G

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

600

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=50V

10

nA

ICBO

VCB=50V, TA=125°C

10

µA

ICEV

VCE=30V, VBE=0.5V

50

nA

BVCBO

IC=10µA

60

V

BVCEO

IC=10mA

60

V

BVEBO

IE=10µA

5.0

V

VCE(SAT)

IC=150mA, IB=15mA

0.4

V

VCE(SAT)

IC=500mA, IB=50mA

1.6

V

VBE(SAT)

IC=150mA, IB=15mA

1.3

V

VBE(SAT)

IC=500mA, IB=50mA

2.6

V

hFE

VCE=10V, IC=0.1mA

75

hFE

VCE=10V, IC=1.0mA

100

hFE

VCE=10V, IC=10mA

100

hFE

VCE=10V, IC=150mA

100

300

hFE

VCE=10V, IC=500mA

50

SOT-363 CASE

R4 (13-January 2010)

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