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2N2218 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N2218
Description  NPN-SWITCHING SILICON TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
NPN-SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
T4-LDS-0091 Rev. 2 (101484)
Page 1 of 4
DEVICES
LEVELS
2N2218
2N2219
JAN
2N2218A
2N2219A
JANTX
2N2218AL
2N2219AL
JANTXV
JANS *
* Also available in Radiation Hardened versions. See datasheet for JANSR2N2218 &
JANSR2N2219
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N2218
2N2219
2N221A; L
2N2219A; L
Unit
Collector-Emitter Voltage
VCEO
30
50
Vdc
Collector-Base Voltage
VCBO
60
75
Vdc
Emitter-Base Voltage
VEBO
5.0
6.0
Vdc
Collector Current
IC
800
mA
Total Power Dissipation
@ TA = +25°C
@ TC = +25°C
PT
0.8
3.0
W
W
Operating & Storage Junction Temp. Range
Top, Tstg
-55 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
RθJC
59
°C/W
Note: (1) Derate linearly 4.6mW/°C above TA > +25°C
(2) Derate linearly 17.0mW/°C above TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
Vdc
IE = 10mAdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
30
50
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 6.0Vdc
VEB = 4.0Vdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
All Types
IEBO
10
10
10
μAdc
ηAdc
Collector-Base Cutoff Current
VCE = 30Vdc
VCE = 50Vdc
2N2218; 2N2219
2N2218A; 2N2219A / AL
ICES
10
10
ηAdc
TO-39 (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
TO-5
2N2218AL
2N2219AL




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