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2N2221A Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N2221A
Description  RADIATION HARDENED
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
T4-LDS-0042 Rev. 3 (100247)
Page 1 of 7
DEVICES
LEVELS
2N2221A
2N2222A
JANSM – 3K Rads (Si)
2N2221AL
2N2222AL
JANSD – 10K Rads (Si)
2N2221AUA
2N2222AUA
JANSP – 30K Rads (Si)
2N2221AUB
2N2222AUB
JANSL – 50K Rads (Si)
2N2221AUBC
2N2222AUBC
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
800
mAdc
Total Power Dissipation @ TA = +25°C
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
PT
0.5
0.65
0.50
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
RθJA
325
210
325
°C/W
1.
Derate linearly 3.08 mW/°C above TA > +37.5°C
2.
Derate linearly 4.76 mW/°C above TA > +63.5°C
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)




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