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2N5238S Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N5238S Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 T4-LDS-0014 Rev. 4 (082192) Page 1 of 2 DEVICES LEVELS 2N4150 2N5237 2N5238 JAN 2N4150S 2N5237S 2N5238S JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Unit Collector-Emitter Voltage VCEO 70 120 170 Vdc Collector-Base Voltage VCBO 100 150 200 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current IC 10 Adc Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) PT 1.0 15 W Operating & Storage Junction Temperature Range Tj , Tstg -65 to +200 °C Thermal Resistance, Junction-to Case Junction- to Ambient RθJC RθJA 10 175 °C/W 1) Derate linearly @ 5.7mW/°C for TA > +25°C 2) Derate linearly @ 100mW/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 0.1mAdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 70 120 170 Vdc Collector-Emitter Cutoff Current VBE = 0.5Vdc, VCE = 60Vdc VBE = 0.5Vdc, VCE = 110Vdc VBE = 0.5Vdc, VCE = 160Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEX 10 10 10 µAdc Collector-Emitter Cutoff Current VCE = 60Vdc VCE = 110Vdc VCE = 160Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEO 10 10 10 µAdc Emitter-Base Cutoff Current VEB = 7.0Vdc VEB = 5.0Vdc IEBO 10 0.1 µAdc TO-5 2N4150, 2N5237, 2N5238 TO-39 (TO-205AD) 2N4150S, 2N5237S, 2N5238S |
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