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CY7C106BN-15VC Datasheet(PDF) 5 Page - Cypress Semiconductor |
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CY7C106BN-15VC Datasheet(HTML) 5 Page - Cypress Semiconductor |
5 / 9 page CY7C106BN Document #: 001-06429 Rev. *A Page 5 of 9 Data Retention Characteristics Over the Operating Range Parameter Description Conditions[10] Min Max Unit VDR VCC for Data Retention 2.0 V ICCDR Data Retention Current VCC = VDR = 2.0V, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V 250 μA tCDR[4] Chip Deselect to Data Retention Time 0 ns tR[4] Operation Recovery Time 200 ms Figure 3. Data Retention Waveform 4.5V 4.5V CE VCC tCDR VDR > 2V DATA RETENTION MODE tR Switching Waveforms Figure 4. Read Cycle No.1[11, 12] Figure 5. Read Cycle No. 2 (OE Controlled)[12, 13] Notes 10. No input may exceed VCC +0.5V. 11. Device is continuously selected, OE and CE = VIL. 12. WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW. 1 PREVIOUS DATA VALID DATA VALID tRC tAA tOHA ADDRESS DATA OUT 50% 50% DATA VALID tRC tACE tDOE tLZOE tLZCE tPU HIGH IMPEDANCE IMPEDANCE ICC ISB tHZOE tHZCE tPD HIGH ADDRESS CE DATA OUT VCC SUPPLY CURRENT OE [+] Feedback |
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