2SD1409A

2009-12-21

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

2SD1409A

High Voltage Switching Applications

• Monolithic construction with built-in base-emitter shunt resistor

Characteristics

Symbol

Rating

Unit

Collector-base voltage

600

V

Collector-emitter voltage

400

V

Emitter-base voltage

5

V

Collector current

6

A

Base current

1

A

Ta = 25°C

2.0

Collector power

dissipation

Tc = 25°C

25

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Base

Emitter

≈ 2.5 kΩ

≈ 200 Ω

Collector

Industrial Applications