CEU6355 datasheet(3/4 Pages) CET

Part #	CEU6355

Description	P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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3 / 4 page

CED6355/CEU6355

3

3000

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

-VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

2.2

1.9

1.6

1.3

1.0

0.7

0.4

V

GS=-10V

I

D=-26A

-100

-50

0

50

100

150

200

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=-250µA

-50

-25

0

25

50

75

100

125

150

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

35

28

21

14

7

0

2

4

6

1

3

5

T

J=125 C

-55 C

25 C

10

1

10

0

10

2

10

3

0.3

0.6

0.9

1.2

1.8

1.5

V

GS=0V

25

20

15

10

5

0

1

4

6

-V

GS=3V

5

3

2

-V

GS=10,8,6,4V

Ciss

Coss

Crss

2500

2000

1500

1000

500

0

5

10

15

20

25

30

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