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ZXTN25040DFH Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXTN25040DFH Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 6 page  ZXTN25040DFH Issue 1 - June 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 130 170 V IC = 100 A Collector-emitter breakdown voltage (forward blocking) BVCEX 130 170 V IC = 100 A; RBE < 1k or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 40 63 V IC = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Emitter-base breakdown voltage BVEBO 78.3 V IE = 100 A Emitter-collector breakdown voltage (reverse blocking) BVECX 67.4 V IE = 100 A, RBC < 1k or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 67.4 V IE = 100 A, Collector-base cut-off current ICBO <1 50 20 nA A VCB = 100V VCB = 100V, Tamb= 100°C Collector-emitter cut-off current ICEX -100 nA VCE = 100V; RBE < 1k or -1V < VBE < 0.25V Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 45 55 mV IC = 1A, IB = 100mA (*) 120 210 mV IC = 1A, IB = 10mA (*) 135 210 mV IC = 2A, IB = 40mA (*) 140 190 mV IC = 4A, IB = 400mA (*) Base-emitter saturation voltage VBE(sat) 960 1050 mV IC = 4A, IB = 400mA (*) Base-emitter turn-on voltage VBE(on) 840 950 mV IC = 4A, VCE = 2V (*) Static forward current transfer ratio hFE 300 450 900 IC = 10mA, VCE = 2V (*) 300 450 IC = 1A, VCE = 2V (*) 30 60 IC = 4A, VCE = 2V (*) 10 IC = 10A, VCE = 2V (*) Transition frequency fT 190 MHz IC = 50mA, VCE = 10V f = 100MHz Output capacitance COBO 11.7 20 pF VCB = 10V, f = 1MHz (*) Delay time td 64 ns VCC = 10V, IC = 1A, IB1 = IB2= 10mA Rise time tr 108 ns Storage time ts 428 ns Fall time tf 130 ns |
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